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Design and Characterization of a 500 kW 20 kHz Dual Active Bridge using 1.2 kV SiC MOSFETs

Sommer, Fabian ORCID iD icon 1; Menger, Nikolas ORCID iD icon 1; Merz, Tobias ORCID iD icon 1; Soltau, Nils; Idaka, Shiori; Hiller, Marc 1
1 Elektrotechnisches Institut (ETI), Karlsruher Institut für Technologie (KIT)

Abstract (englisch):

High power Silicon Carbide (SiC) semiconduc-tor enable an increase of the power level for the Dual Active Bridge (DAB). This paper presents a concept for a novel high power DAB up to 500 kW. 1200 V SiC MOSFETs are used as power semiconductors, which are operated with a switching frequency of 20 kHz. In order to investigate the feasibility of such high power DABs basic design rules are presented and the influence of parasitic components is deduced. It is shown that these parasitic effects become more and more important with increasing power and therefore cannot be neglected as in the case of lower power DABs. Using a calorimetric measurement setup a detailed loss distribution is presented. Measurements confirm the concept for the parasitic influence and design target of 500 k W.

Postprint §
DOI: 10.5445/IR/1000148260/post
Veröffentlicht am 22.03.2023
DOI: 10.23919/IPEC-Himeji2022-ECCE53331.2022.9807023
Zitationen: 3
Zitationen: 3
Cover der Publikation
Zugehörige Institution(en) am KIT Elektrotechnisches Institut (ETI)
Publikationstyp Proceedingsbeitrag
Publikationsdatum 15.05.2022
Sprache Englisch
Identifikator ISBN: 978-4-88686-425-3
KITopen-ID: 1000148260
Erschienen in 2022 International Power Electronics Conference (IPEC-Himeji 2022- ECCE Asia)
Veranstaltung International Power Electronics Conference (IPEC 2022), Himeji, Japan, 15.05.2022 – 19.05.2022
Verlag Institute of Electrical and Electronics Engineers (IEEE)
Seiten 1390–1397
Nachgewiesen in Dimensions
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