High power Silicon Carbide (SiC) semiconduc-tor enable an increase of the power level for the Dual Active Bridge (DAB). This paper presents a concept for a novel high power DAB up to 500 kW. 1200 V SiC MOSFETs are used as power semiconductors, which are operated with a switching frequency of 20 kHz. In order to investigate the feasibility of such high power DABs basic design rules are presented and the influence of parasitic components is deduced. It is shown that these parasitic effects become more and more important with increasing power and therefore cannot be neglected as in the case of lower power DABs. Using a calorimetric measurement setup a detailed loss distribution is presented. Measurements confirm the concept for the parasitic influence and design target of 500 k W.