GaN-Based Modular Multilevel Converter for Low-Voltage Grid Enables High Efficiency
Kiehnle, Philip 1; Himmelmann, Patrick
1; Hiller, Marc 1
1 Elektrotechnisches Institut (ETI), Karlsruher Institut für Technologie (KIT)
1; Hiller, Marc 11 Elektrotechnisches Institut (ETI), Karlsruher Institut für Technologie (KIT)
Abstract (englisch):
Gallium Nitride (GaN) semiconductors with low inductance packages enable low switching losses and high efficiency. In this paper we present a compact arm PCB design with low loop inductance, allowing for fast and efficient switching. The PCB includes four full-bridge cells for a 7 kW Modular Multilevel Converter (MMC) for low-voltage grid applications.
| Zugehörige Institution(en) am KIT | Elektrotechnisches Institut (ETI) |
| Publikationstyp | Proceedingsbeitrag |
| Publikationsjahr | 2022 |
| Sprache | Englisch |
| Identifikator | ISBN: 978-90-75815-39-9 KITopen-ID: 1000153161 |
| HGF-Programm | 37.12.02 (POF IV, LK 01) Design,Operation & Digitalization of the Future Energy Grids |
| Erschienen in | 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) |
| Veranstaltung | 24th European Conference on Power Electronics and Applications (EPE`23 ECCE Europe 2022), Hannover, Deutschland, 05.09.2022 – 09.09.2022 |
| Verlag | Institute of Electrical and Electronics Engineers (IEEE) |
| Vorab online veröffentlicht am | 17.10.2022 |
| Externe Relationen | Abstract/Volltext |
| Nachgewiesen in | Scopus |