Ultralow-Power W-Band Low-Noise Amplifier Design in 130-nm SiGe BiCMOS

This paper presents a power consumption reduction aspect for a 100-GHz low-noise amplifier. Two designs implemented in 0.13-µm SiGe BiCMOS technology demonstrate state-of-the-art performance, whereas $P_{\mathrm{DC}}$ is reduced from 23.5 mW for the standard version to 3.8 mW for the low-power version. Two circuits exhibit a measured gain of 22 dB and 16 dB and a noise figure of 4 dB and 6.3 dB at 100 GHz. An input 1-dB compression point for the standard and the low-power version is -24.5 dBm and -26.5 dBm, respectively. The occupied IC area in both cases is 0.018 mm$^2$ and 0.014 mm$^2$ excluding the pads, which proves to be the most compact design among previously reported in the frequency range of interest.