A Fully Inkjet-Printed Unipolar Metal Oxide Memristor for Nonvolatile Memory in Printed Electronics

Memristors are an interesting novel class of devices for memory and beyond von Neumann computing. Besides classical CMOS technology, memristors can also be manufactured by additive printing techniques and hold great potential for printable neuromorphic circuits and memories. In this work, we report a fully inkjet-printed unipolar metal oxide memristor with a low forming voltage. The memristor is based on a sandwich-like Ag/ZnO/Ag structure. The device exhibits excellent performance parameters, such as high cycle-to-cycle and device-to-device uniformity and a long retention time of ≥104 s. Furthermore, the inkjet-printed memristor shows an exceptionally high ROFF/RON ratio of 107 over 100 pulsed switching cycles.