Test Structures for the Characterization of the Gate Resistance in 16 nm FinFET RF Transistors

The gate resistance is a parasitic element in transistors for RF and millimeter-wave circuits that can negatively impact power gain and noise figure. To develop accurate device models, a reliable measurement methodology is crucial. This article reviews the standard measurement methodology used in the literature and proposes also an additional method, which is evaluated using suitable test structures in a 16 nm FinFET process. The advantages and disadvantages of the two approaches are discussed along with their respective application scenarios.