Fully Automated Wide Temperature Range Semiconductor Characterization
Frank, S. R.
1; Hansel, J. 1; Bitterle, J. 1; Schwendemann, R. 1; Hiller, M. 1
1 Elektrotechnisches Institut (ETI), Karlsruher Institut für Technologie (KIT)
1; Hansel, J. 1; Bitterle, J. 1; Schwendemann, R. 1; Hiller, M. 11 Elektrotechnisches Institut (ETI), Karlsruher Institut für Technologie (KIT)
Abstract (englisch):
This paper introduces a fully automated test bench for −75 °C up to 160 °C static and dynamic semiconductor characterization. First measurements performed with a 1.2 kV, 200 A Si-IGBT module and a 1.2 kV, 250 A SiC-MOSFET module show better semiconductor performance at lower temperatures compared to the conventional high temperature operation.
| Zugehörige Institution(en) am KIT | Elektrotechnisches Institut (ETI) |
| Publikationstyp | Proceedingsbeitrag |
| Publikationsdatum | 04.09.2023 |
| Sprache | Englisch |
| Identifikator | ISBN: 979-8-3503-1678-0 KITopen-ID: 1000162801 |
| HGF-Programm | 37.12.03 (POF IV, LK 01) Smart Areas and Research Platforms |
| Erschienen in | 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe), Aalborg, Denmark, 04-08 September 2023 |
| Veranstaltung | 25th European Conference on Power Electronics and Applications (EPE`23 ECCE Europe 2023), Aalborg, Dänemark, 04.09.2023 – 08.09.2023 |
| Verlag | Institute of Electrical and Electronics Engineers (IEEE) |
| Nachgewiesen in | Dimensions Scopus |
| Relationen in KITopen |