Characteristics and ultra-high total ionizing dose response of 22 nm fully depleted silicon-on-insulator

The radiation response of MOS transistors in a 22 nm Fully Depleted Silicon-On-Insulator (FDSOI) technology exposed to ultra-high total ionizing dose (TID) was investigated. Custom structures including n- and p-channel devices with different sizes and threshold voltage flavours were irradiated with X-rays up to a TID of 100 Mrad(SiO${}_2$) with different back-gate bias configurations, from -8 V to 2 V. The investigation revealed that the performance is significantly affected by TID, with the radiation response being dominated by the charge trapped in the buried oxide.