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Application-Oriented Test Setup for Measuring Dynamic Output and Transfer Characteristics of GaN-HEMTs

Swoboda, Philipp ORCID iD icon 1; Fein, Martin 1; Frank, Simon ORCID iD icon 1; Liske, Andreas ORCID iD icon 1; Hiller, Marc 1
1 Elektrotechnisches Institut (ETI), Karlsruher Institut für Technologie (KIT)

Abstract (englisch):

Apart from the excellent switching and conduction
properties of power GaN-HEMTs, trapping effects are still an
issue degrading the device’s performance. As conventional
methods have been proven inadequate for device characterization with
respect to trapping, new application-oriented characterization
methods have been developed in recent years. In this paper,
an application-oriented test setup for measuring output and
transfer characteristics is presented, which extends an existing
setup for the measurement of the dynamic on-resistance. Initial
results indicate that there is a significant change in characteristics
dependent on the applied off-state drain voltage bias. Addition-
ally, several typical trapping phenomena such as the dynamic
on-resistance, threshold voltage shift and current collapse were
observed.


Postprint §
DOI: 10.5445/IR/1000181727
Veröffentlicht am 13.05.2025
Cover der Publikation
Zugehörige Institution(en) am KIT Elektrotechnisches Institut (ETI)
Publikationstyp Proceedingsbeitrag
Publikationsdatum 16.03.2025
Sprache Englisch
Identifikator ISBN: 979-83-315-1611-6
KITopen-ID: 1000181727
Erschienen in 2025 IEEE Applied Power Electronics Conference and Exposition (APEC), 16th - 20th March 2025, Atlanta
Veranstaltung IEEE Applied Power Electronics Conference and Exposition (2025), Atlanta, GA, USA, 16.03.2025 – 20.03.2025
Verlag Institute of Electrical and Electronics Engineers (IEEE)
Seiten 2348–2355
Nachgewiesen in Dimensions
Scopus
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