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Activation of anomalous Hall effect and orbital magnetization by domain walls in altermagnets

Sorn, Sopheak 1,2; Mokrousov, Yuriy
1 Institut für Theoretische Festkörperphysik (TFP), Karlsruher Institut für Technologie (KIT)
2 Institut für QuantenMaterialien und Technologien (IQMT), Karlsruher Institut für Technologie (KIT)

Abstract (englisch):

Altermagnets are an emerging class of unconventional antiferromagnets, characterized by a Néel ordering that does not break the translational symmetry of the underlying lattice. Depending on the orientation of the Néel vector, the anomalous Hall effect (AHE) may or may not exist. In the so-called pure altermagnets, the AHE is forbidden by magnetic symmetry. Here, we demonstrate that in pure altermagnets, domain walls can lift the symmetry constraints, thereby activating the AHE and orbital magnetization. Taking a representative example of a rutile-lattice tight-binding minimal model in slab geometry, we use linear response theory to demonstrate the emergence of the domain-wall AHE, finding that it is closely related to the orbital magnetization, while the spin magnetization does not play a significant role. Using Landau theory, we argue that, while for a random arrangement of 𝜋 domain walls, the contributions from the individual domain walls will cancel one another, an external magnetic field will favor domain-wall arrangements with specific chirality giving rise to a net AHE signal. Using group theory, we discuss how these findings can be straightforwardly generalized to certain other classes of altermagnets. ... mehr


Verlagsausgabe §
DOI: 10.5445/IR/1000188414
Veröffentlicht am 11.12.2025
Cover der Publikation
Zugehörige Institution(en) am KIT Institut für QuantenMaterialien und Technologien (IQMT)
Institut für Theoretische Festkörperphysik (TFP)
Publikationstyp Zeitschriftenaufsatz
Publikationsmonat/-jahr 12.2025
Sprache Englisch
Identifikator ISSN: 2469-9950, 2469-9969
KITopen-ID: 1000188414
HGF-Programm 47.11.02 (POF IV, LK 01) Emergent Quantum Phenomena
Erschienen in Physical Review B
Verlag American Physical Society (APS)
Band 112
Heft 24
Seiten 245115
Vorab online veröffentlicht am 05.12.2025
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